IGBT - NCEP85T16 MOSFET

Type Designator: NCEP85T16 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 220 W Maximum Drain-Source Voltage |Vds|: 85 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V Maximum Drain Current |Id|: 160 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 105 nC Rise Time (tr): 29 nS Drain-Source Capacitance (Cd): 1520 pF Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm